The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Mar. 15, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dougyong Sung, Seoul, KR;

Youngdo Kim, Hwaseong-si, KR;

Byeongsang Kim, Hwaseong-si, KR;

Yunhwan Kim, Hwaseong-si, KR;

Jungmo Yang, Pyeongtaek-si, KR;

Sejin Oh, Hwaseong-si, KR;

Sungho Jang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01J 2237/06375 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.


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