The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Dec. 19, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hong-Yan Chen, San Jose, CA (US);

Priya Vemparala Guruswamy, Boise, ID (US);

Pamela Castalino, Boise, ID (US);

Tomoko Ogura Iwasaki, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5635 (2013.01); G11C 16/08 (2013.01);
Abstract

Control logic in a memory device causes a programming pulse to be applied to a set of wordlines, where the programming pulse causes a set of electrons to be injected into a first set of gate regions and a second set of gate regions. The control logic executes a first erase sub-operation on a first subset of the set of wordlines to remove a first subset of the set of electrons from the first set of gate regions. The control logic executes a second erase sub-operation on a second subset of the set of wordlines to remove a second subset of the set of electrons from the second set of gate regions.


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