The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jun. 08, 2022
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventor:

Jun Hatakeyama, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C08F 212/14 (2006.01); C08F 220/18 (2006.01); C08F 220/22 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); C08F 212/24 (2020.02); C08F 220/1806 (2020.02); C08F 220/22 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01);
Abstract

A resist material for use in a patterning process includes a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. The resist material has high sensitivity and low CDU in both a positive resist material and a negative resist material.


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