The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Feb. 06, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Zheng-Yong Liang, Hsinchu, TW;
Yu-Yun Peng, Hsinchu, TW;
Keng-Chu Lin, Hsinchu, TW;
Wei-Ting Yeh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes: forming, on a first substrate, a first bonding layer including a first metal oxide material in an amorphous state; forming, on a second substrate, a second bonding layer including a second metal oxide material in an amorphous state; annealing the first and second bonding layers using a laser source, so as to convert the first and second metal oxide materials to a crystalline state; forming, on the first bonding layer, a third bonding layer including a third metal oxide material in an amorphous state; forming, on the second bonding layer, a fourth bonding layer including a fourth metal oxide material in an amorphous state; bonding the first and second substrates to each other through the first to fourth bonding layers; and annealing the third and fourth bonding layers using a heat source, so as to convert the third and fourth metal oxide materials to a crystalline state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile