The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Feb. 17, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Min Huang, Hsinchu, TW;

Tzu-Jui Wang, Fengshan, TW;

Jung-I Lin, Hsinchu, TW;

Hung-Chang Chien, Hsinchu, TW;

Kuan-Chieh Huang, Hsinchu, TW;

Tzu-Hsuan Hsu, Kaohsiung, TW;

Chen-Jong Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10F 30/225 (2025.01); H10P 14/20 (2026.01); H10P 14/60 (2026.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10W 20/074 (2026.01); H10P 14/34 (2026.01); H10P 14/6349 (2026.01); H10W 10/0143 (2026.01); H10W 10/17 (2026.01); H10W 20/069 (2026.01); H10W 20/098 (2026.01); H10F 30/225 (2025.01);
Abstract

Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.


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