The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jun. 23, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Liang Cheng, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Li-Zhen Yu, Hsinchu, TW;
Huang-Lin Chao, Hsinchu, TW;
Pinyen Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method is provided for forming a metal contact plug. In one step, a substrate, which is an Si substrate or an SiOsubstrate, is etched to form a contact hole. In one step, a dielectric liner layer is formed on a sidewall of the contact hole. In one step, the metal contact plug that is in contact with the dielectric liner layer is formed in the contact hole. In one step, an implantation process is performed on the substrate, so as to implant dopants having an atomic size greater than that of Si into the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile