The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Nov. 20, 2023
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Akihito Kawai, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 52/00 (2026.01); H10P 50/64 (2026.01); H10P 52/40 (2026.01); H10P 70/00 (2026.01); H10P 72/00 (2026.01); H10P 72/70 (2026.01); H10P 72/78 (2026.01);
U.S. Cl.
CPC ...
H10P 52/00 (2026.01); H10P 50/642 (2026.01); H10P 52/402 (2026.01); H10P 70/56 (2026.01); H10P 72/0414 (2026.01); H10P 72/0424 (2026.01); H10P 72/0428 (2026.01); H10P 72/0451 (2026.01); H10P 72/7402 (2026.01); H10P 72/78 (2026.01); H10P 72/7416 (2026.01);
Abstract

A wafer processing apparatus includes a chuck table for holding the wafer thereon, a grinding unit having a rotatable grinding wheel with an annular array of grindstones mounted thereon for grinding a surface of the wafer, a cleaning unit for cleaning the wafer that has been ground, and an etching unit for removing a strain from the ground surface of the wafer. The grinding wheel is smaller in diameter than the wafer, enabling the grindstones mounted on the grinding wheel to thin down an inner region of the wafer that includes the ground surface, leaving an outer circumferential ring-shaped stiff portion on the wafer. The etching unit supplies an etching liquid to the inner region of the wafer inward of the outer circumferential ring-shaped stiff portion of the wafer for thereby removing a strain from the ground surface of the wafer.


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