The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Dec. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shao-Tse Huang, Hsinchu City, TW;
Jin-Hao Jhang, Hsinchu County, TW;
Wei-De Ho, Hsinchu City, TW;
Han-Yu Lin, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes a number of operations. A bottom transistor and a top transistor overlapping the bottom transistor are formed. A vertical local interconnect (VLI) structure is formed and electrically connects source/drain regions of the bottom transistor and the top transistor. A hard mask layer is formed over the VLI structure, wherein the hard mask layer includes a bottom nitride layer, a top nitride layer and an amorphous semiconductive layer directly between the bottom nitride layer and the top nitride layer. The hard mask layer is patterned. A trench is formed in the VLI structure. An isolation structure is formed in the trench. A first polishing process is performed to the isolation structure and the hard mask layer, wherein the first polishing process stops the amorphous semiconductive layer. A second polish process is performed to the isolation structure, the bottom nitride layer and the amorphous semiconductive layer.