The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Dec. 07, 2022
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, CN;

Inventors:

Anna Zhang, Wuhan, CN;

Yu Zhou, Wuhan, CN;

Sheng Hu, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 88/00 (2026.01); H10P 52/00 (2026.01); H10P 76/20 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 88/01 (2025.01); H10P 52/00 (2026.01); H10P 76/2041 (2026.01); H10W 72/0112 (2026.01); H10W 72/01235 (2026.01); H10W 72/242 (2026.01);
Abstract

A 3D integrated structure and a method for fabricating the structure. In the method, a first trimming process is performed in a peripheral region of a wafer stack to form a chamfered surface adjacent to and surrounding an active device region. As a result, a thickness of the wafer stack along the chamfered surface gradually decreases from an edge of the active device region outward. In this way, a photoresist layer can be subsequently easily applied to cover the junction of the active device region and the chamfered surface, without the formation of discontinuities there, which may affect the subsequent processes. Additionally, in the method, a second trimming process is performed at an edge of the peripheral region to form a clamping surface adjacent to and surrounding the chamfered surface. In this way, it is unnecessary to clamp the wafer stack at a top surface thereof.


Find Patent Forward Citations

Loading…