Three-dimensional memory devices and methods for forming the same

Abstract

Memory devices and methods for forming the same are disclosed. In certain aspects, a memory device includes a filling layer; a stack structure including interleaved conductive layers and dielectric layers; a channel structure extending through the stack structure and the filling layer. The channel structure includes a memory film and a semiconductor channel. The memory device also includes a doped semiconductor layer in contact with the semiconductor channel. The filling layer is between the doped semiconductor layer and the stack structure. The memory device further includes an insulating layer, and a source contact extending through the insulating layer and in contact with the doped semiconductor layer. The doped semiconductor layer is between the insulating layer and the filling layer.