The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jun. 17, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu City, TW;
Yin-Kai Liao, Taipei City, TW;
Jen-Cheng Liu, Hsin-Chu City, TW;
Kuan-Chieh Huang, Hsinchu City, TW;
Chih-Ming Hung, Changhua County, TW;
Yi-Shin Chu, Hsinchu City, TW;
Hsiang-Lin Chen, Hsinchu City, TW;
Sin-Yi Jiang, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.