The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Sep. 26, 2022
Intel Corporation, Santa Clara, CA (US);
Leonard P. Guler, Hillsboro, OR (US);
Dan S. Lavric, Beaverton, OR (US);
Charles H. Wallace, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Saurabh Acharya, Hillsboro, OR (US);
Thomas O'brien, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Integrated circuit structures having trench contact depopulation structures, and methods of fabricating integrated circuit structures having trench contact depopulation structures, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate stack is over the vertical stack of horizontal nanowires. A dielectric trench structure is adjacent to the gate stack. A dielectric sidewall spacer is between the gate stack and the dielectric trench structure. A dielectric gate cut plug is extending through the gate stack, the dielectric sidewall spacer, and the dielectric trench structure.