The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jun. 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ta-Chun Lin, Hsinchu, TW;
Jhon Jhy Liaw, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a source/drain feature over a substrate; a metal gate structure extending lengthwise along a first direction and adjacent to the source/drain feature; a gate isolation structure extending lengthwise along a second direction substantially perpendicular to the first direction, and a source/drain contact electrically coupled to the source/drain feature and including a first portion directly above the source/drain feature and a second portion extending from the first portion along the first direction. In embodiments, the gate isolation structure divides the metal gate structure into two isolated portions. In embodiments, the first portion has a first width along the second direction and the second portion has a second width along the second direction, the first width being greater than the second width.