The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Mar. 15, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Kae Kumagai, Miyagi, JP;
Motoi Takahashi, Miyagi, JP;
Ryutaro Suda, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Yoshihide Kihara, Miyagi, JP;
Takatoshi Orui, Hillsboro, OR (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32082 (2013.01); H01J 37/32458 (2013.01); H01J 37/32715 (2013.01); H01J 37/32798 (2013.01); H10P 14/69215 (2026.01); H10P 14/69433 (2026.01); H01J 2237/334 (2013.01);
Abstract
A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CHFgas selected from the group consisting of a CHFgas, a CHFgas, a CHFgas, and a CHFgas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CHFgas.