The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Jul. 12, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ping-Wei Wang, Hsin-Chu, TW;

Feng-Ming Chang, Zhubei City, TW;

Jui-Lin Chen, Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 11/419 (2013.01); H10B 10/12 (2023.02); H10B 10/18 (2023.02);
Abstract

A memory cell includes first and second active regions extending lengthwise in a first direction, and first, second, third, and fourth gate structures arranged in order from first to fourth along the first direction. Each of the first, second, third, and fourth gate structures extends lengthwise in a second direction that is perpendicular to the first direction. The first, second, third, and fourth gate structures are configured to engage the first and second active regions in forming first, second, third, fourth, fifth, and sixth transistors of a write-port of the memory cell. The memory cell also includes a fifth gate structure configured to engage the second active region in forming a seventh transistor of a read-port of the memory cell.


Find Patent Forward Citations

Loading…