The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

May. 11, 2022
Applicant:

Siltronic Ag, Munich, DE;

Inventors:

Thomas Stettner, Waging am See, DE;

Walter Edmaier, Wittibreut, DE;

Assignee:

SILTRONIC AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/12 (2006.01); C30B 25/16 (2006.01);
U.S. Cl.
CPC ...
C30B 25/12 (2013.01); C30B 25/16 (2013.01);
Abstract

A method deposits an epitaxial layer on a semiconductor substrate. The method includes: placing the substrate on a susceptor, which is surrounded, separated by a gap, from a preheat ring and is held by a supporting shaft; determining an excentricity between an axis perpendicularly through the center of the preheat ring and through the center of the susceptor; passing deposition gas over the substrate wafer along a flow direction pointing from a gas inlet to outlet; passing purge gas along a lower side of the preheat ring and of the susceptor; and rotating the supporting shaft about an axis of rotation with a frequency, by displacing the supporting shaft from a starting position to an end position and back to the starting position with the frequency of the rotating of the supporting shaft, the displacement path from the starting position to the end position being dependent on the excentricity.


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