The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Mar. 29, 2021
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Gerben Doornbos, Kessel-Lo, BE;
Blandine Duriez, Brussels, BE;
Marcus Johannes Henricus Van Dal, Linden, BE;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A transistor, integrated semiconductor device and methods of making. The transistor includes a patterned gate electrode, a dielectric layer located over the patterned gate electrode and a patterned first oxide semiconductor layer comprising a channel region and source/drain regions located on sides of the channel region. The thickness of the source/drain regions is greater than a thickness of the channel region. The transistor also includes contacts located on the patterned first oxide semiconductor layer and connected to the source/drain regions of the patterned first oxide semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile