The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Feb. 27, 2024
Tokyo Electron Limited, Tokyo, JP;
Qiang Wang, Austin, TX (US);
Shyam Sridhar, Austin, TX (US);
Zhiying Chen, Austin, TX (US);
Peter Lowell George Ventzek, Austin, TX (US);
Mitsunori Ohata, Taiwa-cho, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of adjusting sheath potential of a plasma at a substrate includes applying pulsed plasma source power to a plasma electrode in contact with the plasma while applying pulsed bias power to the substrate, measuring electric potential produced by the pulsed plasma source power and the pulsed bias power to obtain time-resolved electric potential information, and adjusting the electric potential profile at the plasma electrode based on the time-resolved electric potential information. Adjusting the electric potential profile adjusts the sheath potential of the plasma at the substrate. The method may be performed using a plasma system including the plasma electrode and a potential adjustment circuit coupled between the plasma electrode and at least one pulsed DC power supply. The potential adjustment circuit may be configured to adjust the electric potential profile at the plasma electrode.