The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Oct. 14, 2022
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Yoshitaka Nishihara, Chichibu, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/66 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/66 (2013.01); C30B 29/36 (2013.01);
Abstract
A SiC ingot includes a seed crystal and a single crystal grown on the seed crystal, wherein the single crystal has therein a micropipe passing through the single crystal in a growth direction, and when photoluminescence observation is performed on a plurality of wafers cut out from the single crystal in a direction intersecting the growth direction, an S/N ratio of the micropipe in a first wafer cut out of the plurality of wafers, which is closest to the seed crystal, is higher than an S/N ratio of the micropipe in a second wafer cut out from a position further away from the seed crystal than the first wafer.