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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12686914 B1

PDFFull Text
Date of Patent:
Jul. 21, 2026

Filed:

Apr. 05, 2021

Method and device for forming tungsten film, and device for forming intermediate film before forming tungsten film

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kensaku Narushima, Nirasaki City, JP;

Takanobu Hotta, Nirasaki City, JP;

Takuya Kawaguchi, Nirasaki City, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Armstrong Teasdale LLP

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/08 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H10P 14/40 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
C23C 16/0272 (2013.01); C23C 16/08 (2013.01); C23C 16/34 (2013.01); C23C 16/45527 (2013.01); C23C 16/52 (2013.01); H10P 14/412 (2026.01); H10W 20/045 (2026.01);
Abstract

The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.

Find Patent Forward Citations

Narushima, Kensaku. (2026). Method and device for forming tungsten film, and device for forming intermediate film before forming tungsten film (U.S. Patent No. 12686914). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12686914

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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