The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Apr. 19, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Shang-Lun Tsai, Hsinchu City, TW;
Shuo-Mao Chen, New Taipei City, TW;
Monsen Liu, Hsinchu, TW;
PO-Ying Lai, Hsinchu, TW;
Shin-Puu Jeng, Po-Shan Village, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/05 (2026.01); H10W 70/60 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 70/695 (2026.01); H10W 74/15 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 70/05 (2026.01); H10W 70/095 (2026.01); H10W 70/611 (2026.01); H10W 70/685 (2026.01); H10W 90/401 (2026.01); H10W 90/701 (2026.01); H10W 70/695 (2026.01); H10W 74/15 (2026.01); H10W 90/00 (2026.01); H10W 90/724 (2026.01); H10W 90/734 (2026.01);
Abstract
An interposer may include a first metal trace located on a first dielectric layer, a second dielectric layer located on the first dielectric layer, a line-shaped via located in the second dielectric layer and connected to the first metal trace, and a second metal trace located on the second dielectric layer and connected to the line-shaped via.