The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jan. 29, 2024
Applied Materials, Inc., Santa Clara, CA (US);
Yang Li, Sunnyvale, CA (US);
Peiqi Wang, Campbell, CA (US);
Kai Wu, Palo Alto, CA (US);
Dongming Iu, Union City, CA (US);
Xiaozhou Yu, Santa Clara, CA (US);
Insu Ha, San Jose, CA (US);
Meng Zhu, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure provided herein include systems and methods for forming low resistivity tungsten features in a semiconductor device manufacturing scheme using growth suppression techniques. The system includes a processing chamber, a gas delivery system, and a system controller configured to expose at least one opening formed in a multi-tier structure of a substrate to a tungsten-containing precursor and a nucleation reducing agent. The tungsten-containing precursor and the nucleation reducing agent are alternated cyclically to form a nucleation layer within the at least one opening of the substrate. The system controller is further configured to expose the at least one opening of the substrate to a nitrogen-containing gas, a tungsten-containing gas, and a gapfill reducing agent gas to produce a non-uniform tungsten nitride passivation layer in the at least one opening.