The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Feb. 03, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Guan Huei See, Singapore, SG;

Jinho An, San Jose, CA (US);

Arvind Sundarrajan, Singapore, SG;

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10W 72/00 (2026.01); H10W 74/01 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/023 (2026.01); H10W 74/014 (2026.01); H10W 72/0198 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01);
Abstract

Embodiments of methods of die stacking are provided herein. In some embodiments, a method of die stacking with die-to-wafer bonding includes: bonding a plurality of first dies to a substrate via a hybrid bonding process; performing a selective silicon (Si) thinning process to reduce a thickness of the plurality of first dies that are bonded to form a plurality of thinned first dies; passivating the plurality of thinned first dies to form a plurality of passivated thinned first dies to protect the plurality of thinned first dies; filling gaps between adjacent dies of the plurality of thinned first dies with a first fill material, wherein the plurality of passivated thinned first dies and the first fill material together form a first layer; and forming a plurality of first conductive vias through the first layer to the substrate.


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