The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jun. 23, 2023
Nexperia Technology (Shanghai) Ltd., Shanghai, CN;
Nexperia B.v., Nijmegen, NL;
Xukun Zhang, Shanghai, CN;
Chunlin Zhu, Shanghai, CN;
Ke Jiang, Shanghai, CN;
Huiling Zuo, Shanghai, CN;
Junli Xiang, Shanghai, CN;
Jinshan Shi, Shanghai, CN;
Yuan Fang, Shanghai, CN;
Nexperia Technology (Shanghai) Ltd., Shanghai, CN;
Nexperia B.V., NiJmegen, NL;
Abstract
A semiconductor device and a manufacturing method thereof is provided. The device includes a semiconductor layer having a first and second surface opposing each other; a trench gate in the semiconductor layer, extends in a first direction parallel to the first and second surface, and from the first surface to an interior of the layer, and has a gate open end distant from the second surface; a source region of a first conductivity type and a channel region of a second conductivity type, orthographic projections of the source region and the channel region on the second surface at least partially overlap with each other in a depth direction of the trench gate, the source region having a source open end distant from the second surface, and the farther the source open end is from the second surface, the smaller a width of the source open end in the second direction.