The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jan. 04, 2023
Structure with buried doped region for coupling source line contact to gate structure of memory cell
Globalfoundries U.s. Inc., Malta, NY (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
The disclosure provides a structure with a buried doped region for coupling a source line contact to the gate structure of a memory cell. A structure according to the disclosure includes a memory cell having a gate structure extending in a first lateral direction over a substrate. A buried doped region is within the substrate and extends in a second lateral direction from below the gate structure to a portion of the substrate laterally distal to the gate structure. A source line contact is on the portion of the substrate laterally distal to the gate structure. The buried doped region couples the source line contact to the gate structure of the memory cell through a lower surface of the gate structure.