Violetta Sessi

Title: Violetta Sessi - Innovator in Field-Effect Transistor Technology

Introduction

Violetta Sessi is a prominent inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor technology, particularly in the development of field-effect transistors. Her innovative work has led to the granting of a patent that showcases her expertise and creativity in this area.

Latest Patents

Violetta Sessi holds a patent for "Silicided source/drain terminals for field-effect transistors." This patent describes structures that include field-effect transistors and methods for forming these structures. The invention details a first field-effect transistor with a first and second source/drain terminal, and a second field-effect transistor with a third and fourth source/drain terminal. Notably, the first and second source/drain terminals each feature a fully-silicided section located at and above the top surface of a semiconductor layer, while the third and fourth terminals include a partially-silicided section over the top surface of the semiconductor layer.

Career Highlights

Violetta Sessi is currently employed at Globalfoundries Dresden Module One Limited Liability Company & Co. Kg. Her role at this leading semiconductor manufacturing company allows her to apply her innovative ideas and contribute to advancements in technology.

Collaborations

One of her notable collaborators is Maximilian Ludwig Drescher. Together, they work on projects that push the boundaries of semiconductor technology and enhance the performance of electronic devices.

Conclusion

Violetta Sessi is a trailblazer in the field of field-effect transistors, with a patent that reflects her innovative spirit and technical expertise. Her contributions to the semiconductor industry are invaluable, and her work continues to influence future developments in technology.