The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Oct. 05, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Atsutoshi Inokuchi, Miyagi, JP;

Yasuhiko Saito, Miyagi, JP;

Kiyoshi Maeda, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32137 (2013.01); H01J 37/32091 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H10P 50/242 (2026.01); H10P 50/691 (2026.01); H01J 2237/334 (2013.01);
Abstract

A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).


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