The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 05, 2022
Siltronic Ag, Munich, DE;
Timo Mueller, Burghausen, DE;
Michael Boy, Waging am See, DE;
Michael Gehmlich, Weissenborn, DE;
Gudrun Kissinger, Frankfurt, DE;
Dawid Kot, Slubice, PL;
SILTRONIC AG, Munich, DE;
Abstract
A semiconductor wafer of monocrystalline silicon is produced, in the following order: growing a single crystal of silicon by the CZ method; dividing off a wafer consisting completely of an N region, in which there are no agglomerates of silicon interstitials or vacancies having a diameter of more than 20 nm, and has an oxygen concentration of not less than 5.3×10atoms/cmand not more than 5.9×10atoms/cmand a nitrogen concentration of not more than 1.0×10atoms/cm; executing a three separate rapid thermal annealing (RTA) treatments of the wafer at temperatures within different temperature ranges over different time periods in a different atmospheres of argon with and without ammonia.