Stress reduction structures for a semiconductor die in a composite package and methods of forming the same

Abstract

A composite package includes a first semiconductor die which includes a semiconductor substrate; dielectric material layers overlying the semiconductor substrate; an edge ring seal structure laterally enclosing the dielectric material layers without any lateral opening therethrough; at least one passivation dielectric layer overlying the dielectric material layers; and a capping metal ring contacting a top surface segment of the edge ring seal structure and laterally surrounding a lower portion of the at least one passivation dielectric layer. Each corner region of the at least one passivation dielectric layer is free of any metallic material other than a respective single slanted bar segment of the capping metal ring. Alternatively or additionally, a spacer metal ring having a different height than the capping metal ring may be formed within the at least one passivation dielectric layer.