The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Oct. 21, 2021
International Business Machines Corporation, Armonk, NY (US);
Chanro Park, Clifton Park, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Kenneth Chun Kuen Cheng, Shatin, HK;
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of making a semiconductor component includes forming an interconnect in a dielectric layer such that an uppermost surface of the interconnect is substantially coplanar with an uppermost surface of the dielectric layer. The method further includes recessing the dielectric layer such that the uppermost surface of the dielectric layer is lower than the uppermost surface of the interconnect. The method further includes forming spacers in direct contact with the uppermost surface of the recessed dielectric layer such that the spacers are in direct contact with the interconnect. The method further includes recessing the interconnect such that the uppermost surface of the interconnect remains above the uppermost surface of the recessed dielectric layer and is lower than an uppermost surface of the spacers.