The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Dec. 18, 2023
International Business Machines Corporation, Armonk, NY (US);
Minhaz Abedin, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Tao Li, Slingerlands, NY (US);
Julien Frougier, Albany, NY (US);
Mohammad Hasanuzzaman, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a first nanosheet field-effect transistor device having a plurality of first nanosheet channel layers disposed on a substrate, a second nanosheet field-effect transistor device adjacent the first field-effect transistor nanosheet device, the second field-effect transistor nanosheet device having a plurality of second nanosheet channel layers disposed on the substrate, a first source/drain region disposed between opposing sidewalls of the plurality of first nanosheet channel layers and the plurality of second nanosheet channel layers and extending into the substrate, and source/drain sidewall spacers disposed on sidewalls of the first source/drain region extending into the substrate.