The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

May. 07, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Yi Chen, Keelung City, TW;

Chi-Yu Lu, New Taipei City, TW;

Chih-Liang Chen, Hsinchu City, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H10D 30/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/252 (2025.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01); H10D 84/0149 (2025.01); H10D 84/016 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor structure includes a first upper source/drain region, a second upper source/drain region, a first lower source/drain contact, a second lower source/drain contact, and a third conductive region. The first upper source/drain contact is disposed at a first elevation. The second upper source/drain contact is disposed at the first elevation. The first lower source/drain contact is disposed at a second elevation. The second lower source/drain contact is disposed at the second elevation. The third conductive region is disposed at a third elevation. A projection area of the third conductive region is disposed between a projection area of the first upper source/drain contact and a projection area of the second upper source/drain contact. The third elevation is disposed between the first elevation and the second elevation.


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