The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Apr. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Li Chiang, Hsinchu, TW;

Jer-Fu Wang, Hsinchu, TW;

Yi-Tse Hung, Hsinchu, TW;

Tzu-Chiang Chen, Hsinchu, TW;

Meng-Fan Chang, Hsinchu, TW;

Hon-Sum Philip Wong, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10D 30/0415 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/701 (2025.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A memory structure includes a substrate. The memory structure further includes a first transistor, wherein the first transistor is a first distance from the substrate. The memory structure further includes a second transistor, wherein the second transistor is a second distance from the substrate, and the first distance is different from the second distance, and a first source/drain (S/D) region of the first transistor is connected to a second S/D region of the second transistor. The memory structure further includes a plurality of storage elements electrically connected to both the first transistor and the second transistor, wherein each of the plurality of storage elements is a third distance from the substrate, and the third distance is different from both the first distance and the second distance.


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