The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Dec. 15, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A method of forming a memory device including providing a base wafer that includes a substrate, an insulation layer over the substrate, a sacrificial layer over the insulation layer, and a plurality of channel layers embedded in the sacrificial layer and the insulation layer, forming a plurality of grooves in the sacrificial layer each exposing a portion of the insulation layer and separating two adjacent rows of the channel layers, filling the plurality of grooves with an insulation material to form a plurality of spacers, removing the sacrificial layer to form a plurality of trenches that expose portions of the insulation layer and a portion of a sidewall of each of the channel layers, and forming a plurality of gate layers in the trenches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile