The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Aug. 30, 2022
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

David M. Ermert, Danbury, CT (US);

Tom M. Cameron, Newtown, CT (US);

Assignee:

Entegris, Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0042 (2013.01); G03F 7/2004 (2013.01);
Abstract

The invention provides certain mixed Sn (II) amide/alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and/or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.


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