The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Mar. 13, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chao-Wei Chiu, Hsinchu City, TW;

Wei-Yu Chen, Taipei City, TW;

Chih-Chiang Tsao, Taoyuan City, TW;

Hao-Jan Pei, Hsinchu, TW;

Hsiu-Jen Lin, Hsinchu County, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 20/00 (2026.01); H10W 72/20 (2026.01); H10W 74/01 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 20/0698 (2026.01); H10W 74/01 (2026.01); H10W 72/07255 (2026.01); H10W 72/251 (2026.01); H10W 72/923 (2026.01); H10W 72/952 (2026.01); H10W 90/721 (2026.01);
Abstract

An electronic apparatus including a package substrate and a structure disposed on and electrically connected to the package substrate through conductive bumps is provided. The material of the conductive bumps includes a bismuth (Bi) containing alloy or an indium (In) containing alloy. In some embodiments, the bismuth (Bi) containing alloy includes Sn—Ag—Cu—Bi alloy. In some embodiments, a concentration of bismuth (Bi) contained in the Sn—Ag—Cu—Bi alloy ranges from about 1 wt % to about 10 wt %. Methods for forming the Sn—Ag—Cu—Bi alloy are also provided.


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