The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Mar. 25, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yongchul Jeong, Suwon-si, KR;
Sangjin Kim, Suwon-si, KR;
Yigwon Kim, Seongnam-si, KR;
Kyeongbeom Park, Suwon-si, KR;
Suhyun Bark, Seongnam-si, KR;
Sangshin Jang, Seoul, KR;
Jinhee Jang, Seoul, KR;
Cheolin Jang, Seoul, KR;
Tae Min Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device is disclosed. The method may include forming an etch-target layer, a mask layer, a blocking layer, and a photoresist layer, which are sequentially stacked on a substrate; forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light; forming a mask layer, the forming the mask layer including etching the mask layer using the photoresist pattern as an etch mask; and forming a target pattern, the forming the target pattern including etching the etch-target layer using the mask pattern as an etch mask. The photoresist layer may include an organic metal oxide. The blocking layer may be a non-polar layer and may limit and/or prevent a metallic element in the photoresist layer from infiltrating into the mask layer.