The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Dec. 22, 2021
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Nikhil Dole, Castro Valley, CA (US);

Takumi Yanagawa, Fremont, CA (US);

Eric A. Hudson, Berkeley, CA (US);

Merrett Wong, San Carlos, CA (US);

Aniruddha Joi, Milpitas, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H01J 37/32 (2006.01); H10P 50/26 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H10P 50/268 (2026.01); H10P 72/0421 (2026.01); H10P 72/0604 (2026.01); H01J 2237/327 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide layer is under the first nitrogen-containing layer. The method further includes etching the first oxide layer by applying a metal-containing gas. The application of the metal-containing gas is discontinued upon determining that a second nitrogen-containing layer will be reached. The second nitrogen-containing layer is situated under the first oxide layer. The method includes etching the second nitrogen-containing layer by applying the non-metal gas.


Find Patent Forward Citations

Dole, Nikhil. (2026). Systems and methods for etching a high aspect ratio structure (U.S. Patent No. 12672492). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672492

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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