Semiconductor device and method of forming the same

Abstract

A method of forming a semiconductor device includes forming a dummy gate structure across a fin protruding from a substrate, forming gate spacers on opposite sidewalls of the dummy gate structure, forming source/drain epitaxial structures on opposite sides of the dummy gate structure, forming a first interlayer dielectric (ILD) layer on the source/drain epitaxial structures and outer sidewalls of the gate spacers, replacing the dummy gate structure with a replacement gate structure, etching back the replacement gate structure to form a first recess between the gate spacers, forming a source/drain contact in the first ILD layer, and forming a second interlayer dielectric (ILD) layer to fill in the first recess between the gate spacers and over the source/drain contact.