The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Aug. 09, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ming-Fa Chen, Taichung, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/05 (2026.01); H10W 20/00 (2026.01); H10W 20/40 (2026.01); H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 90/00 (2026.01); H10W 70/00 (2026.01); H10W 70/652 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 72/90 (2026.01); H10W 74/10 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 20/023 (2026.01); H10W 20/40 (2026.01); H10W 70/05 (2026.01); H10W 70/09 (2026.01); H10W 70/614 (2026.01); H10W 90/728 (2026.01); H10W 70/099 (2026.01); H10W 70/6528 (2026.01); H10W 72/01365 (2026.01); H10W 72/0198 (2026.01); H10W 72/072 (2026.01); H10W 72/073 (2026.01); H10W 72/20 (2026.01); H10W 72/241 (2026.01); H10W 72/853 (2026.01); H10W 72/874 (2026.01); H10W 72/9413 (2026.01); H10W 74/117 (2026.01); H10W 90/20 (2026.01); H10W 90/297 (2026.01); H10W 90/722 (2026.01); H10W 90/724 (2026.01);
Abstract
Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.