The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Feb. 02, 2023
Applicant:

Niterra Materials Co., Ltd., Yokohama, JP;

Inventors:

Seiichi Suenaga, Yokohama, JP;

Maki Yonetsu, Mitaka, JP;

Sachiko Fujisawa, Kawasaki, JP;

Yoichiro Mori, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 9/00 (2006.01); C22C 9/02 (2006.01); H10W 40/25 (2026.01); H10W 70/66 (2026.01);
U.S. Cl.
CPC ...
H10W 40/255 (2026.01); H10W 70/66 (2026.01);
Abstract

According to the embodiment, a bonded body includes a ceramic substrate, a copper plate. A bonding layer is located on at least one surface of the ceramic substrate. The bonding layer bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer including titanium nitride or titanium oxide as a major component, and a plurality of first alloys positioned between the Ti reaction layer and the copper plate. Each of the plurality of first alloys includes at least one selected from a Cu—Sn alloy and a Cu—In alloy. The first alloys have mutually-different Sn concentrations or In concentrations. According to the embodiment, a warp amount can be reduced. A heating rate and a cooling rate in the bonding process can be increased. According to the embodiment, a silicon nitride substrate is favorable for the ceramic substrate.


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