The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
May. 25, 2023
International Business Machines Corporation, Armonk, NY (US);
Min Gyu Sung, Latham, NY (US);
Liqiao Qin, Albany, NY (US);
Julien Frougier, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
The present disclosure is directed to techniques of fabricating hybrid transistors that combine both TFETs and MOSFETs. The techniques may be commonly integrated such that TFET regions are formed in the same fabrication stages used to fabricate CMOS regions. The TFET and MOSFET may be stacked vertically to reduce the footprint area of the hybrid transistor, which may lead to further semiconductor IC device scaling. The hybrid transistor may utilize a backside power distribution network (BSPDN). The utilization of the BSPDN may reduce resistances, which may result in performance increases. Further, the utilization of the BSPDN may further reduce the footprint area of the hybrid transistor, which may provide for continued scaling. Further, the utilization of the BSPDN may further reduce signal and power potential routing complexities.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile