The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 22, 2021
Intel Corporation, Santa Clara, CA (US);
Christopher J. Jezewski, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Complementary metal-oxide-semiconductor (CMOS) devices and methods related to selective metal contacts to n-type and p-type source and drain semiconductors are discussed. A p-type metal is deposited on n- and p-type source/drains. The p-type metal is selectively removed from the n-type source/drains but remains on dielectric materials adjacent the n-type source/drains. An n-type metal is deposited on the n-type source/drains while the remaining p-type metal seals the dielectric materials to protect the n-type metal from contamination. The n-type metal is then sealed using another p-type metal. A contact fill material contacts the resultant source and drain contact stacks.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile