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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12666681 B1

PDFFull Text
Date of Patent:
Jun. 23, 2026

Filed:

Oct. 13, 2023

Semiconductor structure and fabricating method of the same

Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Yi-Fan Li, Tainan City, TW;

Chen-Ming Wang, Kaohsiung City, TW;

PO-Ching Su, Tainan City, TW;

Pei-Hsun Kao, Kaohsiung City, TW;

Ti-Bin Chen, Tainan City, TW;

Chun-Wei Yu, Tainan City, TW;

Chih-Chiang Wu, Tainan City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:

Winston Hsu

Primary Examiner:

Cory W Eskridge

Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/69 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 64/251 (2025.01); H10D 30/022 (2025.01); H10D 30/601 (2025.01); H10D 30/792 (2025.01); H10D 62/83 (2025.01); H10D 64/015 (2025.01); H10D 64/021 (2025.01); H10D 64/62 (2025.01);
Abstract

A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.

Find Patent Forward Citations

Li, Yi-Fan. (2026). Semiconductor structure and fabricating method of the same (U.S. Patent No. 12666681). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666681

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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