The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
May. 11, 2022
Tokyo Electron Limited, Tokyo, JP;
Mark I. Gardner, Cedar Creek, TX (US);
H. Jim Fulford, Marianna, FL (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Techniques herein include methods of forming channel structures for field effect transistors having a channel current path parallel to a surface of a substrate. 3D in-situ horizontal or lateral growth of the channel and source/drain regions allows for a custom doping in the 3D horizontal nanosheet direction for NMOS and PMOS devices. An ultra-short channel length is achieved with techniques herein because the channel is epitaxially grown in the 3D horizontal nanosheet direction at the monolayer level. Since the channel is grown in a dielectric cavity, a precise channel cross sectional area can be tuned.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile