The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Feb. 19, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Chao Shen, Hsinchu, TW;

Shih-Chang Chen, Chiayi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/611 (2025.01); H10D 30/023 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/518 (2025.01);
Abstract

A transistor includes: a substrate; a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a second curved section; a first drain and a second drain; a first source and a second source; a first curved channel and a second curved channel located at the first curved section of the first fin and the first curved section of the second fin, respectively; and a third curved channel and a fourth curved channel located at the second curved section of the first fin and the second curved section of the second fin, respectively.


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