The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

May. 06, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sam Vaziri, San Jose, CA (US);

Isha Datye, Hsinchu, TW;

Xinyu Bao, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 63/80 (2023.02); H10N 70/011 (2023.02);
Abstract

A memory device includes a selector and a memory cell. The selector includes a first electrode layer, a second electrode layer and a selector layer between the first electrode and the second electrode. The selector layer includes a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and aluminum (Al), a second element selected from a group consisting of oxygen (O) and nitrogen (N), and a third element selected from a group consisting of tellurium (Te), selenium (Se) and antimony (Sb).


Find Patent Forward Citations

Vaziri, Sam. (2026). Memory device and method of forming the same and integrated circuit (U.S. Patent No. 12666627). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666627

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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