The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Aug. 27, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yan Wang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
The present application provides methods of operating memories, memories and memory systems. An example method includes: at a first reading period, performing a sensing operation on memory cells based on a first read voltage, a sensing development duration for the sensing operation performed on the memory cells being not shorter than a first development duration. Based on different sensing development durations, at a first sensing period and a second sensing period of the first reading period, a number of first memory cell, a number of second memory cell and a number of third memory cell are obtained. Based on the number of first memory cell, the number of second memory cell and the number of third memory cell, a valley voltage between a first threshold voltage distribution range and a second threshold voltage distribution range is determined.