The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jun. 02, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Chen-Hsuan Yen, Taichung City, TW;

Jen-Yuan Chang, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/00 (2026.01); H10P 72/70 (2026.01); H10W 20/00 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 42/00 (2026.01); H10P 72/74 (2026.01); H10W 20/084 (2026.01); H10W 20/42 (2026.01); H10W 42/121 (2026.01);
Abstract

A semiconductor device is provided. The semiconductor device includes one or more conductive structures and a protective ring. The protective ring includes a first portion and a second portion at a higher elevation than the first portion. The one or more conductive structures are laterally surrounded by the first portion of the protective ring. The one or more conductive structures are laterally surrounded by the second portion of the protective ring. In one or more first regions of the protective ring, the first portion of the protective ring is not vertically coincident with the second portion of the protective ring.


Find Patent Forward Citations

Yen, Chen-Hsuan. (2026). Semiconductor device and method of making (U.S. Patent No. 12660625). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660625

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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