The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 08, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsiang-Ku Shen, Hsinchu City, TW;
Chun-Wen Hsiao, Hsinchu, TW;
Fang-I Chih, Tainan City, TW;
Wen-Ling Chang, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes providing a workpiece having a first conductive pad and a second conductive pad over a substrate, a topmost point of the second conductive pad is above that of the first conductive pad by a height difference, conformally forming a first etch stop layer on the first and the second conductive pads, forming a dielectric structure over the first etch stop layer, performing a planarization process to the dielectric structure, and after the performing of the planarization process, conformally depositing a dielectric layer over the workpiece, the dielectric layer including a first portion disposed directly over the first conductive pad and a second portion disposed directly over the second conductive pad, where a thickness difference between a thickness of the first portion of the dielectric layer and a thickness of the second portion of the dielectric layer is less than the height difference.